The determination of sensitizing centers and band gap of the photoconductive materials
In this study, Selenium(Se)
photoconductor was developed by mixing the power Se with the powder of
Chlorine (Cl) under the conditions of high vacuum and high temperature.
The production of ZnS photoconductor was also acoomplished from the mixture
of ZnS and ZnCl powders under the same conditions. It was found that the
developed Se and ZnS photoconductors were very sensitive to the light.
The density of sensitizing centers in these photoconductors were determined
by using Capacitance-Voltage (C-V) and Space-Charge-Limited methods. the
energy value of band gap of Se and ZnS and the energy levels of sensitizing
centers in the forbidden gap of Se and ZnS were evaluated by variation
of photoconductivity excitation with wavelength method.
The density of sensitizing centers was found to chanege linearity with the light intensity; the energy value of band gap of Se and ZnS photoconductors were found to be in good agreement with theoretical values.
KEYWORDS: recombination Centers II, Sensitizing centers, Photoconductivity, Se, ZnS.