Prof. Dr. Beşire GÖNÜL
 

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YAYIN LiSTESi

Doçentlik Öncesi

1) A.T. Meney, Beşire Gönül, and E.P. O’Reilly, Evaluation of Various Approximations Used in the Envelope-function Method, Phys. Rew.B 50, 10893 (1994).- link -

2) A.R. Adams, M. Silver, E.P. O’Reilly, B. Gönül, A.F. Phillips, S.J.Sweeney, and P.J.A. Thijs, Hydrostatic Pressure Dependence of the Threshold Current in 1.5 ?m Strained Quantum well Lasers, Phys.stat.sol. (b) 198, 381 (1996).- link -

3) Beşire Gönül, An Analysis of the Variation in Calculated Confined State Energies Using Different Envelope Function Model, Turkish Journal of Physics, 22 (1998) 157.- link-

4) Beşire Gönül, Influence of Effective Mass and Energy Band Splittings on the Radiative Characteristics of QW Lasers at Transparency, Physica E, 14 , 50 (1999).

5) B. Gönül, The Analysis of the Variation of Threshold Current with Pressure in Semiconductor Quantum-Well Lasers, Semicond. Sci. Technol. 14 , 648 (1999).

Doçentlik Sonrası

6) Beşire GÖNÜL, Bülent Gönül, Dilek Tutcu and Okan Özer, Supersymmetric Approach To Exactly Solvable Systems With Position-Dependent Masses, Mod. Phys. Lett. A 17 (2002) 2057.

7) B. Gönül, O. Özer, B. Gönül and F. Üzgün, Exact Solutions of Effective-mass Schrodinger Equations, Mod. Phys. Lett. A 17 (2002) 2453.

8) B. GÖNÜL, S. Dindaroğlu and M. Oduncuoğlu, Influence of the Increase in Electron Effective Mass of GaInNAs on the Performance of Quantum Well Lasers, Balkan Physics Letters, 10 (4) (2002) 200.

9) H. Toktamıs ve B. GÖNÜL, Optical Gain of InGaAsP/In(Ga,As)P/InP Multible Quantum Well Lasers, Balkan Physics Letters, 10 (4) (2002) 230.

10) M. Oduncuoğlu ve B. GÖNÜL, Analysis of InGaAs/GaAs Quantum Wells on (111) GaAs Substrates, Balkan Physics Letters, 10 (4) (2002) 208.

11) H. Toktamış and B. GÖNÜL, A Theoretical Calculation of Band-offsets in Semiconductor Quantum Well, Balkan Physics Letters, 11 (1) (2003)15.

12) B. GÖNÜL, M. Oduncuoğlu, S. Dindaroğlu and B. Yagdiran, Influence of Doping on Gain Characteristics of GaInNAs/GaAs Quantum Well Lasers, Semicond. Science and Technol. 18 (2003) 163.

13) B. GÖNÜL and M. Oduncuoğlu, Theoretical Comparison of Pressure Dependence of Threshold Current of Phosphorus- Aluminium- and Nitrogen-based 1.3 mm Lasers, Semicond. Science and Technol.19 (2004)23

14) Hüseyin Toktamış , Beşire GÖNÜL, and Murat Oduncuoğlu, Comparative Study of the Band-offset Ratio of Conventionally Strained and Strain-compensated InGaAs/GaAs QW Lasers, Physica E 24 (2004) 183.

15) B. GÖNÜL, F. Koçak, H. Toktamış and M. Oduncuoğlu, A Theoretical Comparison of the Band Alignment of Conventionally Strained and Strain-compensated Phosphorus- Aluminum- and Nitrogen-based 1.3 QW Lasers, Chinese J. Phys. 42 (2004) 764.

16) M. Oduncuoğlu and B. GÖNÜL, A Theoretical Comparison of the 1.3 doped Quantum well Lasers for different concentrations, accepted for publication in Physica E ( Low Dimensional Systems and Nanostructures)

17) M. Oduncuoğlu, M. Göl and B. GÖNÜL, Band-offset Dependence of Exciton Binding in QWs, submitted to Modern Physics Letters B.